Please use this identifier to cite or link to this item:
https://scholar.dlu.edu.vn/handle/123456789/3310| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yu-Hsuan Chen | en_US |
| dc.contributor.author | Nguyễn, Đăng Chiến | en_US |
| dc.contributor.author | Jr-Jie Tsai | en_US |
| dc.contributor.author | Yan-Xiang Luo | en_US |
| dc.contributor.author | Chun-Hsing Shih | en_US |
| dc.date.accessioned | 2024-03-02T10:23:32Z | - |
| dc.date.available | 2024-03-02T10:23:32Z | - |
| dc.date.issued | 2015 | - |
| dc.identifier.isbn | 978-4-8634-8538-9 | - |
| dc.identifier.uri | https://scholar.dlu.edu.vn/handle/123456789/3310 | - |
| dc.description.abstract | Unique short-drain effect was reported in extremely scaled tunnel field-effect transistors. This study numerically elucidated the short-drain effect and the difference between the short-channel and short-drain effects. For the short-drain effect, the off-state barriers reduce because of decreased drain lengths, generating ambipolar off-state current and degraded short-channel effect. The shorter channel is, the more pronounced is the short-drain effect. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | IEEE Publishing | en_US |
| dc.title | Short-drain effect of 5 nm tunnel field-effect transistors | en_US |
| dc.type | Conference paper | en_US |
| dc.relation.conference | Silicon Nanoelectronics Workshop (SNW) | en_US |
| dc.relation.references | [1] Dmitri E. Nikonov and Ian A. Young, “Overview of beyond-CMOS devices and a uniform methodology for their benchmarking,” Proc. of the IEEE, p. 2498, 2013. [2] L. Liu, D. Mohata, and S. Datta, “Scaling length theory of double-gate interband tunnel field-effect transistors,” IEEE Trans. Electron Devices, p. 902, 2012. [3] C.-H. Shih and N. V. Kien, “Sub-10-nm asymmetric junctionless tunnel field-effect transistors,” IEEE Journal of the Electron Devices Society, p. 128, 2014. [4] Synopsys Sentaurus Device User Guide, Synopsys Inc., Mountain View, CA, USA, 2010. | en_US |
| dc.description.pages | 57-58 | en_US |
| dc.type.report | Bài báo đăng trên KYHT quốc tế (có ISBN) | en_US |
| dc.publisher.place | USA | en_US |
| item.fulltext | With Fulltext | - |
| item.grantfulltext | restricted | - |
| item.languageiso639-1 | other | - |
| crisitem.author.dept | Faculty of Physics and Nuclear Engineering | - |
| crisitem.author.orcid | https://orcid.org/0000-0003-2329-5860 | - |
| crisitem.author.parentorg | Dalat University | - |
| Appears in Collections: | Kỷ yếu hội thảo (Khoa Vật lý và Kỹ thuật hạt nhân) | |
Files in This Item:
| File | Description | Size | Format | Existing users please Login |
|---|---|---|---|---|
| 11 SNW15 - Short-drain effect of 5 nm tunnel field-effect transistors.pdf | 1.02 MB | Adobe PDF |
CORE Recommender
Page view(s)
180
Last Week
0
0
Last month
checked on Apr 1, 2026
Download(s)
15
checked on Apr 1, 2026
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.