Short-drain effect of 5 nm tunnel field-effect transistors

Abstract

Unique short-drain effect was reported in extremely scaled tunnel field-effect transistors. This study numerically elucidated the short-drain effect and the difference between the short-channel and short-drain effects. For the short-drain effect, the off-state barriers reduce because of decreased drain lengths, generating ambipolar off-state current and degraded short-channel effect. The shorter channel is, the more pronounced is the short-drain effect.