Please use this identifier to cite or link to this item:
https://scholar.dlu.edu.vn/handle/123456789/3305| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ji-Ting Liang | en_US |
| dc.contributor.author | Chun-Hsing Shih | en_US |
| dc.contributor.author | Yan-Xiang Luo | en_US |
| dc.contributor.author | Ming-Kun Huang | en_US |
| dc.contributor.author | Nguyễn, Đăng Chiến | en_US |
| dc.contributor.author | Ruei-Kai Shia | en_US |
| dc.contributor.author | Sau-Mou Wu | en_US |
| dc.contributor.author | Chenhsin Lien | en_US |
| dc.contributor.author | Wen-Fa Wu | en_US |
| dc.date.accessioned | 2024-03-02T09:51:07Z | - |
| dc.date.available | 2024-03-02T09:51:07Z | - |
| dc.date.issued | 2011 | - |
| dc.identifier.uri | https://scholar.dlu.edu.vn/handle/123456789/3305 | - |
| dc.description.abstract | The edge thinning of tunnel oxide is numerically found to increase the Fowler-Nordheim (FN) tunneling gate current in NAND-type Flash cells during programming and erasing operations. This work explores the effect of edge thinning profile in tunnel-oxide on FN tunneling current, and examines the impact of symmetrical and asymmetric geometry on the FN tunneling current in NAND-type Flash cells. | en_US |
| dc.language.iso | en | en_US |
| dc.title | Effects of Edge Thinning on Fowler-Nordheim Tunneling Current of NAND-Type Flash Memory Cells | en_US |
| dc.type | Conference paper | en_US |
| dc.relation.conference | Symposium on Nano Device Technology (SNDT) | en_US |
| dc.relation.references | [1] International Technology Roadmap for Semiconductor, 2007 edition. [2] Y. Taur and Tak H. Ning, Fundamentals of modern VLSI devices, Cambridge University Press, 1998. [3] K. Prall, “Scaling non-volatile memory below 30nm,” in IEEE NVSMW, 2007, pp. 5-9. [4] H. Yang, H. Kim, S.-I. Park, J. Kim, S.-H. Lee, J.-K. Choi, D. Hwang, C. Kim, M. Park, K.-H. Lee, Y.-K. Park, J. K. Shin, and J.-T. Kong, “Reliability issues and models of sub-90nm NAND Flash memory cells,” in IEEE Int. Conf. on Solid-State and Integrated-Circuit Technology, 2006, pp. 760-762. [5] B. Kim, W.-H. Kwon, C.-K. Baek, Y. Son, C.-K. Park, K. Kim, and D. M. Kim, “Edge profile effect of tunnel oxide on erase threshold-voltage distributions in Flash memory cells,” IEEE Trans. Electron Devices, vol. 53, no. 12, pp. 3012-3019, Dec. 2006. [6] J. Lee, J. Kim, W. Lee, S. Lee, H. Lim, J. Lee, S. Nam, H. Lee and C. Song, “Effect of STI shape and tunneling oxide thinning on cell Vth variation in the flash memory” in Proc. IEEE IRPS, 2005, pp. 670-671. [7] M. Park, K. Suh, K. Kim, S.-H. Hur, K. Kim, and W.-S. Lee, “The effect of trapped charge distributions on data retention characteristics of NAND Flash memory cells,” IEEE Electron Device Lett., vol. 28, no. 8, pp. 750-752, Aug. 2007. [8] H. Watanabe, K. Shimizu, Y. Takeuchi, and S. Aritome, “Corner-rounded shallow trench isolation technology to reduce the stress-induced tunnel oxide leakage current for highly reliable flash memories,” in IEDM Tech. Dig., 1996, pp. 833-836. [9] C.-Y. Ho, C.-H. Shih, ”Edge encroachments and suppressions of tunnel oxide in Flash memory cells,” IEEE Electron Devices Lett., vol. 29, pp. 1159-1162, Oct. 2008. [10] M. Park, C.-S. Lee, S.-H. Hur, K. Kim, and W.-S. Lee, “The effect of field oxide recess on cell VTHdistribution of NAND Flash cell arrays,” IEEE Electron Devices Lett., vol. 29, pp. 1050-1052, Sep. 2008. [11] Synopsys MEDICI User’s Manual, Synopsys Inc., Mountain View, CA, 2006. | en_US |
| dc.type.report | Bài báo đăng trên KYHT trong và ngoài nước (không có ISBN) | en_US |
| dc.publisher.place | Taiwan (China) | en_US |
| item.fulltext | With Fulltext | - |
| item.grantfulltext | restricted | - |
| item.languageiso639-1 | other | - |
| crisitem.author.dept | Faculty of Physics and Nuclear Engineering | - |
| crisitem.author.orcid | https://orcid.org/0000-0003-2329-5860 | - |
| crisitem.author.parentorg | Dalat University | - |
| Appears in Collections: | Kỷ yếu hội thảo (Khoa Vật lý và Kỹ thuật hạt nhân) | |
Files in This Item:
| File | Description | Size | Format | Existing users please Login |
|---|---|---|---|---|
| 4 SNDT11_Effects of Edge Thinning on Fowler-Nordheim Tunneling Current of NAND-Type Flash Memory Cells.pdf | 87.7 kB | Adobe PDF |
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