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https://scholar.dlu.edu.vn/handle/123456789/3305| Title: | Effects of Edge Thinning on Fowler-Nordheim Tunneling Current of NAND-Type Flash Memory Cells | Authors: | Ji-Ting Liang Chun-Hsing Shih Yan-Xiang Luo Ming-Kun Huang Nguyễn, Đăng Chiến Ruei-Kai Shia Sau-Mou Wu Chenhsin Lien Wen-Fa Wu |
Issue Date: | 2011 | Place of publication: | Taiwan (China) | Conference: | Symposium on Nano Device Technology (SNDT) | Abstract: | The edge thinning of tunnel oxide is numerically found to increase the Fowler-Nordheim (FN) tunneling gate current in NAND-type Flash cells during programming and erasing operations. This work explores the effect of edge thinning profile in tunnel-oxide on FN tunneling current, and examines the impact of symmetrical and asymmetric geometry on the FN tunneling current in NAND-type Flash cells. |
URI: | https://scholar.dlu.edu.vn/handle/123456789/3305 | Type: | Bài báo đăng trên KYHT trong và ngoài nước (không có ISBN) |
| Appears in Collections: | Kỷ yếu hội thảo (Khoa Vật lý và Kỹ thuật hạt nhân) |
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| File | Description | Size | Format | Existing users please Login |
|---|---|---|---|---|
| 4 SNDT11_Effects of Edge Thinning on Fowler-Nordheim Tunneling Current of NAND-Type Flash Memory Cells.pdf | 87.7 kB | Adobe PDF |
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