Browsing by Author Jr-Jie Tsai

Issue DateTitleAuthor(s)Type
2019Effects of High Temperatures on Cell Reading, Programming, and Erasing of Schottky Barrier Charge-Trapping MemoriesJr-Jie Tsai; Wen-Fa Wu; Yu-Hsuan Chen; Hung-Jin Teng; Nguyễn, Đăng Chiến ; Chun-Hsing ShihJournal article
2011Schottky barrier silicon nanowire SONOS memory with ultralow programming and erasing voltagesChun-Hsing Shih; Wei Chang; Yan-Xiang Luo; Ji-Ting Liang; Ming-Kun Huang; Nguyễn, Đăng Chiến ; Ruei-Kai Shia; Jr-Jie Tsai; Wen-Fa Wu; Chenhsin LienJournal article
2015Short-drain effect of 5 nm tunnel field-effect transistorsYu-Hsuan Chen; Nguyễn, Đăng Chiến ; Jr-Jie Tsai; Yan-Xiang Luo; Chun-Hsing ShihConference paper
2020Transverse scaling of Schottky barrier charge-trapping cells for energy-efficient applicationsHung-Jin Teng; Yu-Hsuan Chen; Jr-Jie Tsai; Nguyễn, Đăng Chiến ; Chenhsin Lien; Chun-Hsing ShihJournal article